PLD epitaxial TiN contacts to 6H-SiC and GaN

被引：0

作者：

Talyansky, V ^{[1
]}

Vispute, RD ^{[1
]}

Andronescu, SN ^{[1
]}

Iliadis, AA ^{[1
]}

Jones, KA ^{[1
]}

Choopun, S ^{[1
]}

Downes, MJ ^{[1
]}

Sharma, RP ^{[1
]}

Venkatesan, T ^{[1
]}

Li, YX ^{[1
]}

Salamanca-Riba, LG ^{[1
]}

Wood, MC ^{[1
]}

Lareau, RA ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, Ctr Supercond Res, College Pk, MD 20742 USA

来源：

POWER SEMICONDUCTOR MATERIALS AND DEVICES | 1998年 / 483卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the influence of TiN growth temperature on the contact resistance in TiN/SiC and TiN/GaN heterostructures. Epitaxial TiN layers grown at temperatures above 600 degrees C formed low resistance contacts to n-type 6H-SiC and GaN of 1.1x10(-5) Omega cm(2) and 7.9x10(-5) Omega cm(2) respectively. Structural and electrical characterization of TiN thin films is discussed.

引用

页码：235 / 239

页数：5

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