Interface characterization of fully depleted SOI MOSFET's by the dynamic transconductance technique

被引：0
|
作者：
Ioannou, Dimitris E. [1 ]
Zhong, Xiaodong [1 ]
Mazhari, Baquer [1 ]
Campisi, George J. [1 ]
Hughes, Harold L. [1 ]
机构：
[1] Dept of Electr & Comput Eng,, George Mason Univ, Fairfax, VA, USA
来源：
Electron device letters | 1991年 / 12卷 / 08期
关键词：
12;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：430 / 432
相关论文
共 50 条
  • [41] Analytical results for the I-V characteristics of a fully depleted SOI-MOSFET
    Morris, H
    Cumberbatch, E
    Tyree, V
    Abebe, H
    IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2005, 152 (06): : 630 - 632
  • [42] Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET
    Tan, TH
    Goel, AK
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2003, 37 (05) : 366 - 370
  • [43] Self-aligned implanted ground-plane fully depleted SOI MOSFET
    Xiong, WZ
    Colinge, JP
    ELECTRONICS LETTERS, 1999, 35 (23) : 2059 - 2060
  • [44] NUMERICAL-ANALYSIS OF SMALL-SIGNAL CHARACTERISTICS OF A FULLY DEPLETED SOI MOSFET
    YANG, PC
    LI, SS
    SOLID-STATE ELECTRONICS, 1993, 36 (07) : 939 - 944
  • [45] Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures
    Pavanello, M.A.
    Martino, J.A.
    Colinge, J.-P.
    Journal De Physique. IV : JP, 1996, 6 (03): : 67 - 69
  • [46] Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET
    Anvarifard, Mohammad K.
    Orouji, Ali A.
    SOLID-STATE ELECTRONICS, 2015, 103 : 154 - 161
  • [47] A compact model for dual material gate stack (DUMGAS) fully depleted SOI MOSFET
    Zheng, Changyong
    Xu, Tailong
    Dai, Yuehua
    Chen, Junning
    Journal of Information and Computational Science, 2013, 10 (13): : 4233 - 4245
  • [48] Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
    Dhanaselvam, P. Suveetha
    Balamurugan, N. B.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (02) : 449 - 455
  • [49] DC and RF characterization of fully depleted strained SOI MOSFETs
    Chen, CL
    Langdo, TA
    Chen, CK
    Fiorenza, JG
    Wyatt, PW
    Currie, MT
    Leitz, CW
    Braithwaite, G
    Fritze, M
    Lambert, R
    Yost, DR
    Cheng, Z
    Lochtefeld, A
    Keast, C
    2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2004, : 86 - 88
  • [50] Two-dimensional model for the subthreshold slope in deep-submicron Fully-Depleted SOI MOSFET's
    van Meer, H
    De Meyer, K
    SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, 2001, : 238 - 241
12345