Interface characterization of fully depleted SOI MOSFET's by the dynamic transconductance technique

被引：0
|
作者：
Ioannou, Dimitris E. [1 ]
Zhong, Xiaodong [1 ]
Mazhari, Baquer [1 ]
Campisi, George J. [1 ]
Hughes, Harold L. [1 ]
机构：
[1] Dept of Electr & Comput Eng,, George Mason Univ, Fairfax, VA, USA
来源：
Electron device letters | 1991年 / 12卷 / 08期
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页码：430 / 432
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