Interface characterization of fully depleted SOI MOSFET's by the dynamic transconductance technique

被引：0

作者：

Ioannou, Dimitris E. ^{[1
]}

Zhong, Xiaodong ^{[1
]}

Mazhari, Baquer ^{[1
]}

Campisi, George J. ^{[1
]}

Hughes, Harold L. ^{[1
]}

机构：

[1] Dept of Electr & Comput Eng,, George Mason Univ, Fairfax, VA, USA

来源：

Electron device letters | 1991年 / 12卷 / 08期

关键词：

12;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：430 / 432

共 50 条

[1] INTERFACE CHARACTERIZATION OF FULLY DEPLETED SOI MOSFETS BY THE DYNAMIC TRANSCONDUCTANCE TECHNIQUE
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CAMPISI, GJ
HUGHES, HL
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 430 - 432
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