INTERFACE CHARACTERIZATION OF FULLY DEPLETED SOI MOSFET(S) BY A THRESHOLD-VOLTAGE METHOD

被引：7
|
作者：
YANG, PC
LI, SS
机构：
[1] Department of Electrical Engineering University of Florida, Gainesville
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 05期
关键词：
D O I：
10.1016/0038-1101(93)90254-N
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：801 / 802
页数：2
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