Mechanism of reactive ion etching lag in WSi2 etching using electron cyclotron resonance plasma

被引：0

作者：

Maruyama, Takahiro ^{[1
]}

Fujiwara, Nobuo ^{[1
]}

Yoneda, Masahiro ^{[1
]}

Tsukamoto, Katsuhiro ^{[1
]}

Banjo, Toshinobu ^{[1
]}

机构：

[1] Mitsubishi Electric Corp, Hyogo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 4 B期

关键词：

Electron cyclotron resonance - Ion energy - Packing density - Plasma etching - Quadrupole mass spectrometer - Reactive ion etching - Space pattern - Tungsten silicide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：2170 / 2174

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