Mechanism of reactive ion etching lag in WSi2 etching using electron cyclotron resonance plasma

被引：0
|
作者：
Maruyama, Takahiro [1 ]
Fujiwara, Nobuo [1 ]
Yoneda, Masahiro [1 ]
Tsukamoto, Katsuhiro [1 ]
Banjo, Toshinobu [1 ]
机构：
[1] Mitsubishi Electric Corp, Hyogo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 4 B期
关键词：
Electron cyclotron resonance - Ion energy - Packing density - Plasma etching - Quadrupole mass spectrometer - Reactive ion etching - Space pattern - Tungsten silicide;
D O I：
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学科分类号：
摘要：
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页码：2170 / 2174
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