Effect of crystal pulling rate on formation of crystal-originated ``particles'' on Si wafers

被引：0
|
作者：
机构：
[1] Ryuta, Jiro
[2] Morita, Etsuro
[3] Tanaka, Toshiro
[4] Shimanuki, Yasushi
来源：
Ryuta, Jiro | 1600年 / 31期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Application of computer modeling to pulling rate and productivity of Czochralski pullers in PV Si crystal growth
    Li, Zhixin
    Smirnov, Andrey
    JOURNAL OF CRYSTAL GROWTH, 2023, 611
  • [32] Investigation on grown-in defects in CZ-Si crystal under slow pulling rate
    Furukawa, J
    Tanaka, H
    Nakada, Y
    Ono, N
    Shiraki, H
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (1-3) : 26 - 30
  • [33] An investigation of single and dual-type ''crystal originated particles''
    Gonzalez, F
    Rozgonyi, GA
    Gilgen, B
    Barbour, R
    PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON, 1996, 96 (13): : 357 - 368
  • [34] Accuracy of differential method to distinguish crystal originated particles from light point defects in Czochralski-grown silicon wafers
    Shimoi, N
    Kurokawa, M
    Tanabe, A
    Koizumi, N
    Matsushita, Y
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (1-3) : 31 - 35
  • [35] Modelling of crystal originated particles and their impact on gate oxide integrity
    Beards, T
    Mertens, PW
    Woerlee, PH
    Wallinga, H
    Schmolke, R
    Heyns, M
    SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2, 2002, 2002 (02): : 528 - 539
  • [36] THEORY OF CRYSTAL-SURFACE FORMATION IN THE PULLING PROCESS
    VORONKOV, VV
    JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 311 - 318
  • [37] Applications of polishing technology using polymer particles to silicon wafers and quartz crystal wafers
    Lu, Y. S.
    Tani, Y.
    Soutome, K.
    Kamimur, Y.
    PROGRESS OF PRECISION ENGINEERING AND NANO TECHNOLOGY, 2007, 339 : 263 - +
  • [38] Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt-crystal interface in the Czochralski growth of germanium crystals
    Saadatirad, Mahboobeh
    Tavakoli, Mohammad Hossein
    Khodamoradi, Hossein
    Masharian, Seyedeh Razieh
    CRYSTENGCOMM, 2021, 23 (39) : 6967 - 6976
  • [39] Features of binary melt solidification at variable crystal pulling rate
    Kanishchev, V. N.
    Barannik, S., V
    FUNCTIONAL MATERIALS, 2011, 18 (01): : 95 - 100
  • [40] Oscillations of the crystal–melt interface caused by harmonic oscillations of the pulling rate for the cylindrical phase of crystal growth
    M. G. Vasil’ev
    Technical Physics Letters, 2017, 43 : 143 - 147
12345