共 50 条
- [21] Defect formation in Si and GaAs single crystal wafers subjected to mechanical treatment Gorn Zh, 9-10 (141-145):
- [22] Atomic force microscope observation of the change in shape and subsequent disappearance of `crystal-originated particles' after hydrogen-atmosphere thermal annealing Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (01): : 1 - 4
- [23] Defect formation in Si and GaAs single crystal wafers subjected to mechanical treatment KRISTALLOGRAFIYA, 1997, 42 (01): : 141 - 144
- [25] Simulation of the voids distribution in 400 mm diameter CZ silicon crystal effect by crystal pulling rate Guan, Xiaojun (guanxj2003@126.com), 2015, Journal of Functional Materials (46):
- [26] Morphology change of artificial crystal originated particles, and the effect on gate oxide integrity JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (8B): : L841 - L843
- [27] Influence of crystal originated particles on gate oxide breakdown JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (11B): : L1476 - L1479
- [28] Influence of crystal originated particles on gate oxide breakdown Jpn J Appl Phys Part 2 Letter, 11 B (L1476-L1479):
- [30] Dependence of the gate oxide integrity on the crystal originated defects in Czochralski silicon wafers PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON, 1996, 96 (13): : 151 - 159