PHOTOEMISSION OF ELECTRONS FROM INTERFACE STATES IN SILICON MOS STRUCTURES.

被引：0

作者：

Fertig, W. ^{[1
]}

Pagnia, H. ^{[1
]}

机构：

[1] Technische Hochschule Darmstadt, Darmstadt, West Ger, Technische Hochschule Darmstadt, Darmstadt, West Ger

来源：

| 1600年 / 93期

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D O I：

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摘要：

SEMICONDUCTOR DEVICES, MOS

引用

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[1] PHOTOEMISSION OF ELECTRONS FROM INTERFACE STATES IN SILICON MOS STRUCTURES
FERTIG, W
PAGNIA, H
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : 717 - 722
[2] RADIATION STATES IN MOS STRUCTURES.
Kiblik, V.Ya.
Litovchenko, V.G.
Litvinov, R.O.
Soviet Microelectronics (English Translation of Mikroelektronika), 1979, 8 (06): : 398 - 401
[3] GENERATION OF ELECTRONIC STATES AT THE SILICON OXYNITRIDE-SILICON INTERFACE IN MOS STRUCTURES
MIRANDA, E
REDIN, G
FAIGON, A
STRABONI, A
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 : A319 - A320
[4] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE
WILLIAMS, R
PHYSICAL REVIEW, 1965, 140 (2A): : A569 - &
[5] SiC MOS Interface States: Similarity and Dissimilarity from Silicon
Umeda, T.
Kosugi, R.
Sakuma, Y.
Satoh, Y.
Okamoto, H.
Harada, S.
Ohshima, T.
DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10, 2012, 50 (04): : 305 - 311
[6] TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES
DAHLKE, WE
APPLIED PHYSICS LETTERS, 1967, 10 (10) : 261 - &
[7] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE
GOODMAN, AM
PHYSICAL REVIEW, 1966, 144 (02): : 588 - &
[8] Phenomenon of Internal Photoemission of Electrons in Metal-Insulator-Semiconductor (MIS) Structures.
Marczewski, Mariusz
Strzalkowski, Ireneusz
Elektronika Warszawa, 1979, 20 (04): : 141 - 147
[9] EVIDENCE FOR MULTIPHONON EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
JOHNSON, NM
SOLID STATE COMMUNICATIONS, 1978, 25 (07) : 481 - 484
[10] PHOTOEMISSION STUDIES OF INTERFACE BARRIER ENERGIES OF IRRADIATED MOS STRUCTURES
PEEL, JL
KJAR, RA
EDEN, RC
APPLIED PHYSICS LETTERS, 1970, 17 (01) : 3 - +

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