CHANGES IN THE MINORITY-CARRIER LIFETIME DUE TO IRRADIATION OF HIGH-RESISTIVITY P-TYPE SILICON.

被引：0

作者：

Basheleishvili, Z.V. ^{[1
]}

Garnyk, V.S. ^{[1
]}

Gorin, S.N. ^{[1
]}

Pagava, T.A. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR, A. A., Baikov Inst of Metallurgy, Moscow,, USSR, Acad of Sciences of the USSR, A. A. Baikov Inst of Metallurgy, Moscow, USSR

来源：

Soviet physics. Semiconductors | 1984年 / 18卷 / 09期

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页码：1074 / 1075

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