CHANGES IN THE MINORITY-CARRIER LIFETIME DUE TO IRRADIATION OF HIGH-RESISTIVITY P-TYPE SILICON.

被引：0
|
作者：
Basheleishvili, Z.V. [1 ]
Garnyk, V.S. [1 ]
Gorin, S.N. [1 ]
Pagava, T.A. [1 ]
机构：
[1] Acad of Sciences of the USSR, A. A., Baikov Inst of Metallurgy, Moscow,, USSR, Acad of Sciences of the USSR, A. A. Baikov Inst of Metallurgy, Moscow, USSR
来源：
Soviet physics. Semiconductors | 1984年 / 18卷 / 09期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
6
引用
收藏
页码：1074 / 1075
相关论文
共 50 条
  • [41] HIGH INJECTION EFFECTS ON CONDUCTIVITY AND CARRIER LIFETIME IN P-TYPE SILICON MATERIAL
    BIELLEDASPET, D
    ESPIOUSSAS, F
    JOHAN, A
    ROUX, M
    REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (05): : 945 - 959
  • [42] BOUND SPACE-CHARGE IN HIGH-RESISTIVITY COMPENSATED P-TYPE SILICON WITH GOLD CONTACTS
    BYKOVSKII, YA
    ZUEV, VV
    CHUFAROV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 159 - 160
  • [43] Capacitance-voltage characterization for MOS capacitor on p-type high-resistivity silicon substrate
    Rong, B
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 198 - 201
  • [44] BOUND SPACE CHARGE IN HIGH-RESISTIVITY COMPENSATED p-TYPE SILICON WITH GOLD CONTACTS.
    Bykovskii, Yu.A.
    Zuev, V.V.
    Chufarov, V.A.
    1600, (07):
  • [45] Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures
    Makarenko, L. F.
    Lastovski, S. B.
    Korshunov, F. P.
    Murin, L. I.
    Moll, M.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4561 - 4564
  • [46] Carrier lifetime control and characterization of high-resistivity silicon used for high-power devices
    Schulze, HJ
    Frohnmeyer, A
    Niedernostheide, FJ
    Hille, F
    Tütto, P
    Pavelka, T
    Wachutka, G
    HIGH PURITY SILICON VI, 2000, 4218 : 414 - 424
  • [47] Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon.
    Bebek, C
    Groom, D
    Holland, S
    Karcher, A
    Kolbe, W
    Lee, J
    Levi, M
    Palaio, N
    Turko, B
    Uslenghi, M
    Wagner, M
    Wang, G
    2001 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORDS, VOLS 1-4, 2002, : 72 - 75
  • [48] ON THE EFFECT OF HIGH-TEMPERATURE HEAT-TREATMENT ON THE MINORITY-CARRIER LIFETIME IN SILICON
    GLINCHUK, KD
    LITOVCHENKO, NM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (01): : K75 - K78
  • [49] MINORITY CARRIER MOBILITY IN UNIAXIALLY COMPRESSED P-TYPE SILICON
    CRESSWEL.MW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (01): : 95 - &
  • [50] Identification of Cr in p-type silicon using the minority carrier lifetime measurement by the surface photovoltage method
    Mishra, K
    APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3281 - 3283
12345