PREPARATION OF SURFACE-BARRIER DETECTORS FROM HIGH-RESISTIVITY P-TYPE SILICON

被引：0

作者：

PROTSENKO, AV

SINITSYN, VN

PANASENK.NV

KOROL, VM

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 09期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：1118 / +

页数：1

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[1] PREPARATION OF HIGH-RESISTIVITY SILICON SURFACE-BARRIER DETECTORS FOR USE AT LARGE REVERSE BIAS VOLTAGES
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NUCLEAR INSTRUMENTS & METHODS, 1964, 26 (02): : 205 - 208
[2] SURFACE-BARRIER DETECTORS MADE OF P-TYPE SILICON (PREPARATION METHOD AND CHARACTERISTICS)
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[3] FABRICATION OF SURFACE-BARRIER NUCLEAR PARTICLE DETECTORS FROM P-TYPE SILICON
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[4] HIGH-RESISTIVITY SILICON SURFACE-BARRIER DETECTORS AS PROTON SPECTROMETERS ABOVE 15 MEV
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[5] FORMATION OF A BARRIER JUNCTION IN SURFACE-BARRIER DETECTORS ON BASIS OF P-TYPE SILICON
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[6] AGING OF ALUMINUM CONTACTS OF P-TYPE SILICON SURFACE-BARRIER DETECTORS
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[7] REVERSE CURRENT OF HIGH-RESISTIVITY SILICON SURFACE-BARRIER COUNTERS
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MEYER, O
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[8] A NOTE ON NON-INJECTING BACK CONTACTS FOR HIGH-RESISTIVITY SILICON SURFACE-BARRIER DETECTORS
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 226 (2-3): : 564 - 565
[9] INVESTIGATIONS OF PROCESS OF FORMATION OF A BARRIER JUNCTION IN SURFACE-BARRIER DETECTORS WITH P-TYPE SILICON BASE
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[10] BULK PROPERTIES OF HIGH-RESISTIVITY P-TYPE SILICON
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (03) : C60 - C60

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