Low temperature growth of amorphous and polycrystalline silicon films from a modified inductively coupled plasma

被引：0
|
作者：
Goto, Masashi [1 ]
Toyoda, Hirotaka [1 ]
Kitagawa, Masatoshi [1 ]
Hirao, Takashi [1 ]
Sugai, Hideo [1 ]
机构：
[1] Nagoya Univ, Nagoya, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 6 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3714 / 3720
相关论文
共 50 条
  • [21] Low temperature deposition with inductively coupled plasma
    Lee, Seung-Hoon
    Jung, Dong-Ha
    Jung, Seung-Jae
    Hong, Seung-Chan
    Lee, Jung-Joong
    International Journal of Materials Research, 2022, 97 (04): : 475 - 479
  • [22] Low-temperature growth of germanium quantum dots on silicon oxide hy inductively coupled plasma CVD
    Shieh, J
    Ko, TS
    Chen, HL
    Dai, BT
    Chu, TC
    CHEMICAL VAPOR DEPOSITION, 2004, 10 (05) : 265 - 269
  • [23] Nanocrystalline silicon thin films prepared by low pressure planar inductively coupled plasma
    Raha, Debnath
    Das, Debajyoti
    APPLIED SURFACE SCIENCE, 2013, 276 : 249 - 257
  • [24] GROWTH AND PROPERTIES OF THIN SIO2-FILMS BY INDUCTIVELY COUPLED LOW-TEMPERATURE PLASMA ANODIZATION
    ZHANG, JF
    TAYLOR, S
    ECCLESTON, W
    NIELD, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (08) : 824 - 830
  • [25] Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature
    Wang Jin-Xiao
    Qin Yan-Li
    Yan Heng-Qing
    Gao Ping-Qi
    Li Jun-Shuai
    Yin Min
    He De-Yan
    CHINESE PHYSICS B, 2009, 18 (02) : 773 - 777
  • [26] Growth and characterization of amorphous fluorinated carbon films by inductively coupled plasma chemical vapor deposition
    Gu, Jiandong
    Li, Dongming
    Feng, Zhiqing
    Niu, Jinhai
    Liu, Dongping
    Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2009, 29 (01): : 61 - 67
  • [27] Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature
    王金晓
    秦艳丽
    闫恒庆
    高平奇
    栗军帅
    尹旻
    贺德衍
    Chinese Physics B, 2009, 18 (02) : 773 - 777
  • [28] Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature
    Department of Physics, Lanzhou University, Lanzhou 730000, China
    Chin. Phys., 2009, 2 (773-777):
  • [29] LOW-TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SILICON FILMS ON AMORPHOUS SUBSTRATES BY PARTIALLY IONIZED SILICON BEAMS
    YOKOTA, K
    MIYAURA, T
    TAKESHITA, K
    TOKUDA, H
    TAMURA, S
    FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A115 - A118
  • [30] High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma
    Sakikawa, N
    Shishida, Y
    Miyazaki, S
    Hirose, M
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 337 - 343
12345