Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

被引：0

作者：

王金晓 ^{[1
]}

秦艳丽 ^{[1
]}

闫恒庆 ^{[1
]}

高平奇 ^{[1
]}

栗军帅 ^{[1
]}

尹旻 ^{[1
]}

贺德衍 ^{[1
]}

机构：

[1] Department of Physics, Lanzhou University

来源：

Chinese Physics B | 2009年 / 18卷 / 02期

基金：

中国国家自然科学基金;

关键词：

surface structure; columnar growth; inductively coupled plasma CVD; crystalline silicon films;

D O I：

暂无

中图分类号：

TN304.055 [];

学科分类号：

摘要：

Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH 4 and H 2 as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as ～9.8 V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.

引用

页码：773 / 777

页数：5

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