Chemical vapor deposition of several silicon-based dielectric films

被引：0
|
作者：
Neogi, S. [1 ]
Gulino, D.A. [1 ]
机构：
[1] Ohio Univ, Athens, United States
来源：
Materials and Manufacturing Processes | 1991年 / 6卷 / 03期
关键词：
Silicon Oxynitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Thin films of dielectric materials are used extensively in the semiconductor and microelectronics industries, and a number of techniques are used to prepare them. Both conventional chemical vapor deposition and plasma-enhanced chemical vapor deposition of silicon dioxide, silicon nitride, and silicon oxynitride are discussed in this review. The effect of process parameters on the properties of these films is discussed.
引用
收藏
页码：433 / 449
相关论文
共 50 条
  • [31] Chemical vapor deposition of titanium-silicon-nitride films
    Smith, PM
    Custer, JS
    APPLIED PHYSICS LETTERS, 1997, 70 (23) : 3116 - 3118
  • [32] THE CHEMICAL VAPOR-DEPOSITION OF SILICON THIN-FILMS
    SCOTT, BA
    ESTES, RD
    BEACH, DB
    SILICON CHEMISTRY, 1988, : 367 - 375
  • [33] Characterization of ultrathin electroless barriers grown by self-aligned deposition on silicon-based dielectric films
    Chen, ST
    Chen, GS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (10) : D99 - D105
  • [34] Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications
    Jhansirani, K.
    Dubey, R. S.
    More, M. A.
    Singh, Shyam
    RESULTS IN PHYSICS, 2016, 6 : 1059 - 1063
  • [35] Deposition of amorphous silicon films by hot-wire chemical vapor deposition
    Feenstra, KF
    Schropp, REI
    Van der Weg, WF
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6843 - 6852
  • [36] Kinetics of the chemical vapor deposition of composite ceramic films based on silicon nitrides and carbides
    Grigor'ev, YM
    Chizhov, PE
    Chukanov, NV
    INORGANIC MATERIALS, 1999, 35 (11) : 1200 - 1203
  • [37] Highly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cells
    Hsiao, Jui-Chung
    Chen, Chien-Hsun
    Yang, Hung-Jen
    Wu, Chien-Liang
    Fan, Chia-Ming
    Huang, Chien-Fu
    Lin, Chao-Cheng
    Yu, Peichen
    Hwang, Jenn-Chang
    JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 2013, 44 (05) : 758 - 761
  • [38] Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materials
    Kim, K.
    Kwon, D.H.
    Nallapati, G.
    Lee, G.S.
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (3 pt 2):
  • [39] Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materials
    Kim, K
    Kwon, DH
    Nallapati, G
    Lee, GS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (03): : 1509 - 1513
  • [40] The Structural Properties of Carbon Nanotubes Grown on Porous Silicon-Based Materials by Thermal Chemical Vapor Deposition Method
    Husairi, F. S.
    Zobir, S. A. M.
    Rusop, M.
    Abdullah, S.
    NANOSYNTHESIS AND NANODEVICE, 2013, 667 : 477 - 481
12345