Chemical vapor deposition of several silicon-based dielectric films

被引：0
|
作者：
Neogi, S. [1 ]
Gulino, D.A. [1 ]
机构：
[1] Ohio Univ, Athens, United States
来源：
Materials and Manufacturing Processes | 1991年 / 6卷 / 03期
关键词：
Silicon Oxynitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Thin films of dielectric materials are used extensively in the semiconductor and microelectronics industries, and a number of techniques are used to prepare them. Both conventional chemical vapor deposition and plasma-enhanced chemical vapor deposition of silicon dioxide, silicon nitride, and silicon oxynitride are discussed in this review. The effect of process parameters on the properties of these films is discussed.
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页码：433 / 449
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