Kinetics of the chemical vapor deposition of composite ceramic films based on silicon nitrides and carbides

被引：0

作者：

Grigor'ev, YM ^{[1
]}

Chizhov, PE ^{[1
]}

Chukanov, NV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Chem Phys, Chernogolovka 142432, Russia

来源：

INORGANIC MATERIALS | 1999年 / 35卷 / 11期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The kinetics of the chemical vapor deposition of composite ceramic films in the Si(CH3)(4), Si(CH3)(4) + H-2, and Si(CH3)(4) + NH3 + H-2 systems between 1000 and 1900 K were studied in situ by the electrothermographic method. A kinetic equation of the process was proposed, and the rate constants were determined as functions of temperature. The effect of deposition conditions on the phase composition of the reaction products was examined. A kinetic model of the process is discussed.

引用

页码：1200 / 1203

页数：4

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