Kinetics of the chemical vapor deposition of composite ceramic films based on silicon nitrides and carbides

被引：0
|
作者：
Grigor'ev, YM [1 ]
Chizhov, PE [1 ]
Chukanov, NV [1 ]
机构：
[1] Russian Acad Sci, Inst Chem Phys, Chernogolovka 142432, Russia
来源：
INORGANIC MATERIALS | 1999年 / 35卷 / 11期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The kinetics of the chemical vapor deposition of composite ceramic films in the Si(CH3)(4), Si(CH3)(4) + H-2, and Si(CH3)(4) + NH3 + H-2 systems between 1000 and 1900 K were studied in situ by the electrothermographic method. A kinetic equation of the process was proposed, and the rate constants were determined as functions of temperature. The effect of deposition conditions on the phase composition of the reaction products was examined. A kinetic model of the process is discussed.
引用
收藏
页码：1200 / 1203
页数：4
相关论文
共 50 条
  • [31] Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS)
    Coltrin, ME
    Ho, P
    Moffat, HK
    Buss, RJ
    THIN SOLID FILMS, 2000, 365 (02) : 251 - 263
  • [32] Ultrafast deposition of silicon nitride and semiconductor silicon thin films by hot wire chemical vapor deposition
    Schropp, R. E. I.
    van der Werf, C. H. M.
    Verlaan, V.
    Rath, J. K.
    Li, H.
    THIN SOLID FILMS, 2009, 517 (10) : 3039 - 3042
  • [33] Hydrogen elimination kinetics during chemical vapor deposition of silica films
    Ojeda, F
    Abel, F
    Albella, JM
    JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (24): : 6258 - 6264
  • [34] Chemical vapor deposition of titanium nitride thin films: kinetics and experiments
    Su, Juan
    Boichot, Raphael
    Blanquet, Elisabeth
    Mercier, Frederic
    Pons, Michel
    CRYSTENGCOMM, 2019, 21 (26): : 3974 - 3981
  • [35] THERMODYNAMICS AND KINETICS OF CHEMICAL VAPOR-DEPOSITION OF ALUMINUM NITRIDE FILMS
    PAULEAU, Y
    BOUTEVILLE, A
    HANTZPERGUE, JJ
    REMY, JC
    CACHARD, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1532 - 1537
  • [36] Chemical Vapor Deposition of Manganese Metallic Films on Silicon Oxide Substrates
    Sun, Huaxing
    Zaera, Francisco
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (44): : 23585 - 23595
  • [37] Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization
    Govindhan Dhanaraj
    Yi Chen
    Hui Chen
    Dang Cai
    Hui Zhang
    Michael Dudley
    Journal of Electronic Materials, 2007, 36 : 332 - 339
  • [38] Carbonized tantalum catalysts for catalytic chemical vapor deposition of silicon films
    Cheng, Shimin
    Gao, Huiping
    Ren, Tong
    Ying, Pinliang
    Li, Can
    THIN SOLID FILMS, 2012, 520 (16) : 5155 - 5160
  • [39] Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition Method
    ZHONG Boqiang
    Semiconductor Photonics and Technology, 1998, (01) : 32 - 36
  • [40] Chemical vapor deposition of silicon carbide epitaxial films and their defect characterization
    Dhanaraj, Govindhan
    Chen, Yi
    Chen, Hui
    Cai, Dang
    Zhang, Hui
    Dudley, Michael
    JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (04) : 332 - 339
12345