Kinetics of the chemical vapor deposition of composite ceramic films based on silicon nitrides and carbides

被引：0

作者：

Grigor'ev, YM ^{[1
]}

Chizhov, PE ^{[1
]}

Chukanov, NV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Chem Phys, Chernogolovka 142432, Russia

来源：

INORGANIC MATERIALS | 1999年 / 35卷 / 11期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The kinetics of the chemical vapor deposition of composite ceramic films in the Si(CH3)(4), Si(CH3)(4) + H-2, and Si(CH3)(4) + NH3 + H-2 systems between 1000 and 1900 K were studied in situ by the electrothermographic method. A kinetic equation of the process was proposed, and the rate constants were determined as functions of temperature. The effect of deposition conditions on the phase composition of the reaction products was examined. A kinetic model of the process is discussed.

引用

页码：1200 / 1203

页数：4

共 50 条

[41] CONTINUOUS GROWTH OF POLYCRYSTALLINE SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION
SARMA, KR
RICE, MJ
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 313 - 323
[42] PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF POLYCRYSTALLINE SILICON FILMS
SARMA, KR
GURTLER, RW
RAMSEY, WC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C350 - C350
[43] Silicon nitride films deposited by atmospheric pressure chemical vapor deposition
Lin, X
Endisch, D
Chen, XM
Kaloyeros, A
Arkles, B
CHEMICAL ASPECTS OF ELECTRONIC CERAMICS PROCESSING, 1998, 495 : 107 - 112
[44] Chemical vapor deposition and defect characterization of silicon carbide epitaxial films
Chen, Yi
Dhanaraj, Govindhan
Chen, Hui
Vetter, William
Dudley, Michael
Zhang, Hui
PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 591 - +
[45] INTRACAVITY LASER SPECTROSCOPY - CHEMICAL VAPOR-DEPOSITION OF SILICON FILMS
ATKINSON, GH
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 201 : 239 - PHYS
[46] Towards a multiscale approach to the growth of silicon films by chemical vapor deposition
Masi, M
Bertani, V
Cavallotti, C
Carrà, S
MATERIALS CHEMISTRY AND PHYSICS, 2000, 66 (2-3) : 229 - 235
[47] PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF CERAMIC FILMS AND COATINGS
DAVIS, RF
PROCESSING SCIENCE OF ADVANCED CERAMICS, 1989, 155 : 213 - 225
[48] Chemical vapor deposition of silicon carbide titanium carbide composite films from dichlorodimethylsilane, titanium tetrachloride, and methane
Takeuchi, T
Miyoshi, H
Egashira, Y
Komiyama, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (02) : 564 - 569
[49] Chemical Vapor Deposition of Iron, Iron Carbides, and Iron Nitride Films from Amidinate Precursors
Krisyuk, Vladislav
Gleizes, Alain N.
Aloui, Lyacine
Turgambaeva, Asiya
Sarapata, Bartosz
Prud'Homme, Nathalie
Senocq, Francois
Samelor, Diane
Zielinska-Lipiec, Anna
de Caro, Dominique
Vahlas, Constantin
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (08) : D454 - D461
[50] NEW METHOD FOR PHYSICAL VAPOR-DEPOSITION OF METALS, ALLOYS AND COMPOUNDS SUCH AS NITRIDES AND CARBIDES
MICHEL, H
GANTOIS, M
LUITEN, CH
HEAT TREATMENT OF METALS, 1984, 11 (03): : 66 - 66

← 1 2 3 4 5 →