Jumping recharging in thin silicon layers implanted with ions and subdued to annealing

被引：0
|
作者：
Zukowski, P. [1 ]
Partyka, J. [1 ]
Wegierek, P. [1 ]
机构：
[1] Lublin Technical Univ, Lublin, Poland
来源：
Electron Technology (Warsaw) | 1997年 / 30卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：159 / 162
相关论文
共 50 条
  • [41] Determining the Parameters of Silicon Ions Implanted into Dielectric Layers by Spectroscopic Ellipsometry
    Shvets, V. A.
    Prokopyev, V. Yu.
    Chikichev, S. I.
    Aulchenko, N. A.
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2007, 43 (05) : 445 - 452
  • [42] Recrystallization of silicon on insulator layers implanted with high doses of hydrogen ions
    Tyschenko, IE
    Talochkin, AB
    Gutakovskii, AK
    Popov, VP
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 23 - 28
  • [43] UTILIZATION COEFFICIENT OF IMPLANTED IMPURITIES IN SILICON LAYERS SUBJECTED TO SUBSEQUENT LASER ANNEALING
    KHAIBULLIN, IB
    SHTYRKOV, EI
    ZARIPOV, MM
    GALYAUTDINOV, MF
    ZAKIROV, GG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 190 - 192
  • [44] ELECTRON-IRRADIATION ASSISTED ANNEALING OF BORON AND PHOSPHORUS IMPLANTED SILICON LAYERS
    SUSKI, J
    CSEPREGI, L
    GYULAI, J
    RZEWUSKI, H
    WERNER, Z
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (03): : 137 - 141
  • [45] RESIDUAL DEFECTS IN IMPLANTED LAYERS ON SILICON AFTER HIGH-TEMPERATURE ANNEALING
    GERASIMENKO, NN
    KALININ, VV
    STENIN, SI
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (3-4): : 167 - 172
  • [46] ANNEALING OF IMPLANTED LAYERS OF SILICON BY PULSED CO2-LASER RADIATION
    GALIAUTDINOV, MF
    DANILEIKO, IK
    ZARIPOV, MM
    MANENKOV, AA
    SIDORIN, AV
    KHAIBULLIN, IB
    SHTYRKOV, EI
    DOKLADY AKADEMII NAUK SSSR, 1981, 257 (05): : 1110 - 1113
  • [47] AN EXPERIMENTAL-STUDY ON LASER ANNEALING OF THIN SILICON LAYERS
    GRIGOROPOULOS, CP
    BUCKHOLZ, RH
    DOMOTO, GA
    JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1988, 110 (02): : 416 - 423
  • [48] LASER ANNEALING OF IMPLANTED SILICON
    KUTUKOVA, OG
    STRELTSOV, LN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 265 - 267
  • [49] ANNEALING STAGES OF IMPLANTED SILICON
    HLAVKA, J
    GRNO, J
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1989, 112 (01): : 327 - 330
  • [50] Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
    Sobolev, N. A.
    Aleksandrov, O. V.
    Sakharov, V. I.
    Serenkov, I. T.
    Shek, E. I.
    Kalyadin, A. E.
    Parshin, E. O.
    Melesov, N. S.
    SEMICONDUCTORS, 2019, 53 (02) : 153 - 155
12345