Jumping recharging in thin silicon layers implanted with ions and subdued to annealing

被引:0
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作者
Zukowski, P. [1 ]
Partyka, J. [1 ]
Wegierek, P. [1 ]
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[1] Lublin Technical Univ, Lublin, Poland
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Electron Technology (Warsaw) | 1997年 / 30卷 / 02期
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页码:159 / 162
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