Jumping recharging in thin silicon layers implanted with ions and subdued to annealing

被引：0
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作者：
Zukowski, P. [1 ]
Partyka, J. [1 ]
Wegierek, P. [1 ]
机构：
[1] Lublin Technical Univ, Lublin, Poland
来源：
Electron Technology (Warsaw) | 1997年 / 30卷 / 02期
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页码：159 / 162
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