Effect of fluorine implantation dose on boron thermal diffusion in silicon

被引:0
|
作者
机构
[1] El Mubarek, H.A.W.
[2] Bonar, J.M.
[3] Dilliway, G.D.
[4] Ashburn, P.
[5] Karunaratne, M.
[6] Willoughby, A.F.
[7] Wang, Y.
[8] Hemment, P.L.F.
[9] Price, R.
[10] Zhang, J.
[11] Ward, P.
来源
El Mubarek, H.A.W. | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词
The authors would like to acknowledge the Engineering and Physical Sciences Research Council for funding this work;
D O I
暂无
中图分类号
学科分类号
摘要
30
引用
收藏
相关论文
共 50 条
  • [41] THE ISOTOPE EFFECT OF BORON IMPLANTATION IN SILICON SIMULATED
    TSATIS, DE
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1891 - 1892
  • [42] Low energy boron implantation in silicon and room temperature diffusion
    Collart, E.J.H.
    Weemers, K.
    Cowern, N.E.B.
    Politiek, J.
    Bancken, P.H.L.
    van Berkum, J.G.M.
    Gravesteijn, D.J.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 139 (1-4): : 98 - 107
  • [43] Low energy boron implantation in silicon and room temperature diffusion
    Collart, EJH
    Weemers, K
    Cowern, NEB
    Politiek, J
    Bancken, PHL
    van Berkum, JGM
    Gravesteijn, DJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 139 (1-4): : 98 - 107
  • [44] THE EFFECT OF THERMAL-OXIDATION OF SILICON ON BORON-DIFFUSION IN EXTRINSIC CONDITIONS
    ISHIKAWA, Y
    NAKAMICHI, I
    MATSUMOTO, S
    NIIMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (09): : 1602 - 1603
  • [46] The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon
    Jones, KS
    Chen, J
    Bharatan, S
    Jackson, J
    Rubin, L
    PugaLambers, M
    Venables, D
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (11) : 1361 - 1364
  • [47] The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon
    K. S. Jones
    J. Chen
    S. Bharatan
    J. Jackson
    L. Rubin
    M. Puga-Lambers
    D. Venables
    Journal of Electronic Materials, 1997, 26 : 1361 - 1364
  • [48] HIGH-DOSE RATE EFFECT OF FOCUSED-ION-BEAM BORON IMPLANTATION INTO SILICON
    TAMURA, M
    SHUKURI, S
    ISHITANI, T
    ICHIKAWA, M
    DOI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L417 - L420
  • [49] IMPLANTATION OF BORON IN SILICON
    HOFKER, WK
    PHILIPS RESEARCH REPORTS, 1975, : 1 - 121
  • [50] Effect of Arsenic Implantation Dose on p-Type ZnO Films Obtained via Thermal Diffusion from Silicon Substrates
    Huang, Yi-Jen
    Shih, Meng-Fu
    Liu, Chun-Chu
    Chu, Sheng-Yuan
    Lo, Kuang-Yao
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (11) : H373 - H375