共 50 条
- [23] EFFECTS OF HIGH-DOSE FLUORINE IMPLANTATION INTO SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 67 (1-4): : 481 - 485
- [24] Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 (1-4): : 276 - 280
- [29] Precipitation of boron in silicon on high-dose implantation Semiconductors, 2010, 44 : 285 - 288