Single electron device with asymmetric tunnel barriers

被引：0
|
作者：
Matsumoto, Yoshinari [1 ]
Hanajiri, Tatsuro [1 ]
Toyabe, Tohru [1 ]
Sugano, Takuo [1 ]
机构：
[1] Toyo Univ, Saitama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 2 B期
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页码：1126 / 1131
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