Single electron device with asymmetric tunnel barriers

被引：0
|
作者：
Matsumoto, Yoshinari [1 ]
Hanajiri, Tatsuro [1 ]
Toyabe, Tohru [1 ]
Sugano, Takuo [1 ]
机构：
[1] Toyo Univ, Saitama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 2 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1126 / 1131
相关论文
共 50 条
  • [21] Characteristics of silicon-on-insulator single-electron transistors with electrically induced tunnel barriers
    Kim, KR
    Kim, DH
    Lee, JD
    Park, BG
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 40 (01) : 140 - 144
  • [22] Single-electron transistor in silicon-on-insulator with Schottky-contact tunnel barriers
    Fukui, H
    Fujishima, M
    Hoh, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 4147 - 4150
  • [23] Single electron transistors with e-beam evaporation of SiO2 tunnel barriers
    Filmer, Matthew J.
    Snider, Gregory L.
    Orlov, Alexei O.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (06):
  • [24] Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes
    Ghazali, Norizzawati M.
    Tomizawa, Hiroshi
    Hagiwara, Noriyuki
    Suzuki, Katsuya
    Hashim, Abdul M.
    Yamaguchi, Tomohiro
    Akita, Seiji
    Ishibashi, Koji
    AIP ADVANCES, 2019, 9 (10)
  • [25] Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers
    Pooley, DM
    Ahmed, H
    Mizuta, H
    Nakazato, K
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) : 4772 - 4776
  • [26] Characterization of tunnel barriers in polycrystalline silicon point-contact single-electron transistors
    Furuta, Y
    Mizuta, H
    Nakazato, K
    Kamiya, T
    Tan, YT
    Durrani, ZAK
    Taniguchi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (4B): : 2675 - 2678
  • [27] Single-electron device - An ultimate device that operates on just a single electron
    Takahashi, Y
    NTT REVIEW, 2000, 12 (01): : 12 - 16
  • [28] Magnetic tunnel junctions with single-layer-graphene tunnel barriers
    Li, Wan
    Xue, Lin
    Abruna, H. D.
    Ralph, D. C.
    PHYSICAL REVIEW B, 2014, 89 (18):
  • [29] The characteristic of elongated Coulomb-blockade regions in a Si quantum-dot device coupled via asymmetric tunnel barriers
    Lee, Sejoon
    Lee, Youngmin
    Song, Emil B.
    Hiramoto, Toshiro
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (16)
  • [30] The characteristic of elongated Coulomb-blockade regions in a Si quantum-dot device coupled via asymmetric tunnel barriers
    Lee, S. (sejoon@dongguk.edu), 1600, American Institute of Physics Inc. (114):
12345