Investigation of spin state in a quantum dot by using strongly asymmetric tunnel barriers

被引：6

作者：

Hayashi, T ^{[1
]}

Fujisawa, T

Hirayama, Y

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] CREST, Kawaguchi 3310012, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 238卷 / 02期

关键词：

D O I：

10.1002/pssb.200303024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the spin state of a GaAs lateral quantum dot (QD) by using strongly asymmetric tunnel barriers. The saturated current depends on the current polarity, which switches the direction of the dominant tunneling transition that increases or decreases the total spin. With this technique, the spin polarization and the Coulomb interaction are investigated. We find that high spin states appearing in some magnetic field regions can be understood by considering simple Coulomb interactions.

引用

页码：262 / 265

页数：4

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