Modeling of optoelectronic switch with PIN photodiode and GaAs MESFET transmission gate

被引：0

|

作者：

Telecommunications Research Lab, Edmonton, Canada ^{[1
]}

机构：

来源：

IEEE Trans Electron Devices | / 11卷 / 1833-1837期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[31] A pnpn GaAs-InGaAs optoelectronic switch
Guo, Der-Feng
Tsai, Jung-Hui
Li, Chien-Ming
2007 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2007, : 234 - 236
[32] REVIEW OF GaAs MESFET GATE ELECTRODE FABRICATION TECHNOLOGIES.
Weitzel, C.E.
Doane, D.A.
1600, (133):
[33] CALCULATION OF MICROWAVE PERFORMANCE OF BUFFER LAYER GATE GAAS MESFET
NAGASHIMA, A
UMEBACHI, S
KANO, G
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (05) : 537 - 539
[34] A NEW MODEL FOR THE DUAL-GATE GAAS-MESFET
LICQURISH, C
HOWES, MJ
SNOWDEN, CM
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (10) : 1497 - 1505
[35] A SIMPLIFIED MICROWAVE MODEL OF THE GAAS DUAL-GATE MESFET
SCOTT, JR
MINASIAN, RA
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) : 243 - 248
[36] Equations provide accurate GaAs MESFET modeling
Rousseau, Kenneth V.
Microwaves & RF, 1991, 30 (11)
[37] A REVIEW OF GAAS-MESFET GATE ELECTRODE FABRICATION TECHNOLOGIES
WEITZEL, CE
DOANE, DA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (10) : C409 - C416
[38] ELECTRON SATURATION VELOCITY IN SHORT GATE GaAs MESFET.
Yang Yuefei
Wang Weiyuan
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1986, 7 (03): : 237 - 241
[39] A new modeling of the characteristics of GaAs MESFET's
Kenzai, C
Zaabat, M
Saidi, Y
Khiter, A
ACTA PHYSICA POLONICA A, 2000, 98 (06) : 747 - 762
[40] DEPENDENCE OF GAAS-MESFET MODEL PARAMETERS ON GATE LENGTH
DOBRZANSKI, L
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 142 (02): : K113 - K116

← 1 2 3 4 5 →