Modeling of optoelectronic switch with PIN photodiode and GaAs MESFET transmission gate

被引：0
|
作者：
Telecommunications Research Lab, Edmonton, Canada [1 ]
机构：
来源：
IEEE Trans Electron Devices | / 11卷 / 1833-1837期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] LASER-MESFET OPTOELECTRONIC INTEGRATION ON GAAS - A SIMPLE TECHNOLOGICAL PROCESS
    BRILLOUET, F
    CLEI, A
    KAMPFER, A
    BIBLEMONT, S
    AZOULAY, R
    DUHAMEL, N
    ELECTRONICS LETTERS, 1986, 22 (23) : 1258 - 1260
  • [42] GAAS MSM PHOTODIODE USING THE HIGHLY DOPED CHANNEL LAYER OF A HETEROSTRUCTURE MESFET
    PORGES, M
    LALINSKY, T
    SAFRANKOVA, J
    HUDEK, P
    KRAUS, J
    TEGUDE, FJ
    VONWENDORFF, W
    JAGER, D
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1993, 136 (01): : K65 - K69
  • [43] A NEW STRUCTURE GAAS-MESFET WITH A SELECTIVELY RECESSED GATE
    OHTA, I
    OTSUKI, T
    KAZUMURA, M
    KANO, G
    TERAMOTO, I
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) : 389 - 390
  • [44] Modeling of transverse propagation delays in a GAAS MESFET
    Goel, AK
    Mohun, VT
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1997, 14 (05) : 297 - 301
  • [45] GAAS-MESFET MODELING AND NONLINEAR CAD
    CURTICE, WR
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (02) : 220 - 230
  • [46] MODELING OF SINGLE-GATE AND DUAL-GATE MESFET MIXERS
    MEIERER, R
    TSIRONIS, C
    ELECTRONICS LETTERS, 1984, 20 (02) : 97 - 98
  • [47] Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate
    Bronner, W
    Benz, W
    Dammann, M
    Ganser, P
    Grun, N
    Hurm, V
    Jakobus, T
    Kohler, K
    Ludwig, M
    Olander, E
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 383 - 386
  • [48] Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate
    Bronner, W
    Benz, W
    Dammann, M
    Ganser, P
    Grun, N
    Hurm, V
    Jakobus, T
    Kohler, K
    Ludwig, M
    Olander, E
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 383 - 386
  • [49] Operation of Suspended Lateral SOI PIN Photodiode with Aluminum Back Gate
    Li, Guoli
    Andre, Nicolas
    Poncelet, Olivier
    Gerard, Pierre
    Ali, Sued Zeeshan
    Udrea, Florin
    Francis, Laurent A.
    Zeng, Yun
    Flandre, Denis
    2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016), 2016, : 155 - 158
  • [50] MODELING AND ANALYSIS OF DUAL-GATE MESFET MIXERS
    ASHOKA, H
    TUCKER, RS
    ELECTRONICS LETTERS, 1984, 20 (05) : 220 - 221
12345