A pnpn GaAs-InGaAs optoelectronic switch

被引：0
|
作者：
Guo, Der-Feng [1 ]
Tsai, Jung-Hui [1 ]
Li, Chien-Ming [1 ]
机构：
[1] AF Acad, Dept Elect Engn, POB 14-49, Kangshan 820, Kaohsiung Cty, Taiwan
来源：
2007 INTERNATIONAL CONFERENCE ON MICROELECTRONICS | 2007年
关键词：
delta-doped; negative differential resistance; optoelectronic switch;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An optoelectronic switch with both n- and p-type delta-doped (delta-doped) quantum wells was investigated. The delta-doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of delta-doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance, (NDR) phenomenon in the current-voltage (I-V) characteristics of the device due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light.
引用
收藏
页码：234 / 236
页数：3
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