CHARACTERISTICS OF A GAAS-INGAAS QUANTUM-WELL RESONANT-TUNNELING SWITCH

被引：3

作者：

GUO, DF ^{[1
]}

LAIH, LW ^{[1
]}

TSAI, JH ^{[1
]}

LIU, WC ^{[1
]}

HSU, WC ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV, DEPT ELECT ENGN, TAINAN 70101, TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.358748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A switching device, with a p-type delta-doped sheet in the center of an InGaAs-GaAs quantum well, has been fabricated and demonstrated. An N-shaped negative-differential-resistance phenomenon resulting from the resonant-tunneling effect through the miniband is observed in the current-voltage measurement. From the experimental results, it is seen that the temperature plays an important role in device operation. The influences of temperature upon the peak-current voltage, valley-current voltage, peak-current density, and valley-current density are studied and discussed. © 1995 American Institute of Physics.

引用

页码：2782 / 2785

页数：4

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