Cross-Sectional Observation of LSI of 4 M bit DRAM by High Resolution Transmission Electron Microscopy

被引：0
|
作者：
Song, Minghui [1 ]
Hashimoto, Hatsujiro [2 ]
Yokota, Yasuhiro [2 ]
Matsukawa, Takayuki [3 ]
Ajika, Natsuo [3 ]
Ogoh, Ikuo [3 ]
机构：
[1] Department of Metal Physics, University of Science and Technology Beijing, Beijing,100083, China
[2] Okayama University of Science, Okayama,700, Japan
[3] LS1 Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Hyogo, Itami,664, Japan
来源：
Microscopy | 1992年 / 41卷 / 05期
关键词：
22;
D O I：
10.1093/oxfordjournals.jmicro.a050976
中图分类号：
学科分类号：
摘要：
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页码：337 / 349
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