Cross-Sectional Observation of LSI of 4 M bit DRAM by High Resolution Transmission Electron Microscopy

被引：0

作者：

Song, Minghui ^{[1
]}

Hashimoto, Hatsujiro ^{[2
]}

Yokota, Yasuhiro ^{[2
]}

Matsukawa, Takayuki ^{[3
]}

Ajika, Natsuo ^{[3
]}

Ogoh, Ikuo ^{[3
]}

机构：

[1] Department of Metal Physics, University of Science and Technology Beijing, Beijing,100083, China

[2] Okayama University of Science, Okayama,700, Japan

[3] LS1 Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Hyogo, Itami,664, Japan

来源：

Microscopy | 1992年 / 41卷 / 05期

关键词：

22;

D O I：

10.1093/oxfordjournals.jmicro.a050976

中图分类号：

学科分类号：

摘要：

引用

页码：337 / 349

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