Study of the equilibrium processes in the gas phase during silicon carbide sublimation

被引：0
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作者：
Lilov, S.K. [1 ]
机构：
[1] Univ of Sofia, Sofia, Bulgaria
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1993年 / B21卷 / 01期
关键词：
Composition - Crystal growth - Dissociation - Doping (additives) - Epitaxial growth - Evaporation - Film growth - High temperature effects - Phase equilibria - Sublimation - Thermodynamics;
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摘要：
The thermodynamic analysis of the equilibrium processes in the gas phase during silicon carbide sublimation in the temperature interval 1500-2150 K is carried out. On the basis of the results of the thermodynamic analysis the composition of the equilibrium gas phase above silicon carbide and the `extents of the development' of reactions of silicon carbide dissociation and evaporation are determined. The thermodynamic analysis carried out is shown that the composition and the stoichiometry of the gas phase above silicon carbide depend very much on the temperature and it is necessary to take into account this dependence in the analysis of the growth processes of silicon carbide monocrystals and epitaxial layers.
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页码：65 / 69
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