Analysis of silicon carbide growth by sublimation sandwich method

被引：17
|
作者：
Karpov, SY
Makarov, YN
Mokhov, EN
Ramm, MG
Ramm, MS
Roenkov, AD
Talalaev, RA
Vodakov, YA
机构：
[1] UNIV ERLANGEN NURNBERG,FLUID MECH DEPT,D-91058 ERLANGEN,GERMANY
[2] CTR ADV TECHNOL,ST PETERSBURG 194156,RUSSIA
[3] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 173卷 / 3-4期
关键词：
SiC; sublimation growth; thermodynamics;
D O I：
10.1016/S0022-0248(96)00969-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Basic mechanisms of growth of silicon carbide crystals using the sublimation sandwich method with reactive SIC-C or SiC-Si environment are studied both theoretically and experimentally. Dependence of the growth rate on the process parameters (substrate temperature, temperature difference between the source and the substrate, and temperature of the environment) is calculated using an advanced thermodynamic model. The effect of the environment on 6H-SiC growth is studied in detail. The theoretical results are compared to the experimental data.
引用
收藏
页码：408 / 416
页数：9
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