Thermodynamic analysis of the gas phase at the dissociative evaporation of silicon carbide

被引：8
|
作者：
Lilov, S.K. [1 ]
机构：
[1] Univ of Sofia, Sofia, Bulgaria
来源：
Computational Materials Science | 1993年 / 1卷 / 04期
关键词：
Composition - Dissociation - Epitaxial growth - Evaporation - Phase equilibria - Sublimation - Thermal conductivity - Thermodynamics;
D O I：
10.1016/0927-0256(93)90033-J
中图分类号：
学科分类号：
摘要：
The thermodynamic analysis of the gas phase at the dissociative evaporation of SiC in the temperature interval (1500-3150) K is carried out. On the basis of the obtained results of the thermodynamic analysis the composition of the equilibrium gas phase above silicon carbide and the 'extents of development' of reactions of silicon carbide dissociation and evaporation are determined. The carried out thermodynamic analysis has shown that the composition and the stoichiometry of the gas phase above silicon carbide depend very much on the temperature, and it is necessary to take this dependence into account in the analysis of the growth processes of silicon carbide monocrystals and epitaxial layers.
引用
收藏
页码：363 / 368
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