ANNEALING OF RADIATION DEFECTS IN A GALLIUM PHOSPHIDE SINGLE CRYSTAL.

被引：0
|
作者：
Churin, S.A.
Frolov, I.A.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1975年 / 9卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The kinetics of annealing of radiation defects in GaP single crystals irradiated with zinc ions was investigated by determining the absorption of light in the implantation-doped layer as a function of the annealing temperature and duration. The measurements were carried out using an MV-MVI electronic spectrophotometer. Samples of n-type gallium phosphide were irradiated at room temperature using an ion-beam unit with magnetic field separation. The surface of a sample was scanned by the ion beam in order to ensure a uniform distribution of the impurity. The ion-current density did not exceed 0. 5 mu A/cm**2. Samples were annealed in silicone oil.
引用
收藏
页码：1334 / 1335
相关论文
共 50 条
  • [41] INFLUENCE OF YTTERBIUM ON THE FORMATION OF RADIATION DEFECTS IN P-N STRUCTURES MADE OF GALLIUM-PHOSPHIDE
    GRINSON, AA
    GUTKIN, AA
    KASATKIN, VA
    SIDOROV, VG
    SHLIKHTOV, SN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1180 - 1181
  • [42] Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects
    Dubovyi, V. K.
    Kanevsky, S. O.
    Litovchenko, P. G.
    Opilat, V. Ya.
    Tartachnik, V. P.
    FUNCTIONAL MATERIALS, 2005, 12 (03): : 587 - 590
  • [43] Polarized and directed roentgen radiation out of a crystal.
    Stark, J
    NATURWISSENSCHAFTEN, 1930, 18 : 531 - 531
  • [44] BORON IMPURITY EFFECTS IN GALLIUM-PHOSPHIDE CRYSTAL
    KIM, CH
    YIP, S
    JOURNAL OF CHEMICAL PHYSICS, 1972, 57 (09): : 4055 - &
  • [45] HARDNESS ANISOTROPY OF SENDUST ALLOY SINGLE CRYSTAL.
    Shimotori, Kazumi
    Miyauchi, Masami
    Fukasawa, Yoshiharu
    Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, 1974, 38 (10): : 937 - 941
  • [46] Fabrication and visible emission of single-crystal diameter-modulated gallium phosphide nanochains
    Fu, Lu-Tang
    Chen, Zhi-Gang
    Zou, Jin
    Cong, Hong-Tao
    Lu, Gao-Qing
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (12)
  • [47] Synthesis, single crystal. structure and characterization of pentanitromonoformylhexaazaisowurtzitane
    Chen, Huaxiong
    Chen, Shusen
    Li, Lijie
    Jiao, Qingze
    Wei, Tianyu
    Jin, Shaohua
    JOURNAL OF HAZARDOUS MATERIALS, 2010, 175 (1-3) : 569 - 574
  • [48] BORON-DOPED GaAs SINGLE CRYSTAL.
    Kawasaki, Akihisa
    Tada, Kohji
    Kotani, Toshihiro
    Nakai, Ryusuke
    Takebe, Toshihiko
    Murai, Shigeo
    Akai, Shin-ichi
    Yamaguchi, Tsuyoshi
    Sumitomo Electric Technical Review, 1983, (22): : 235 - 242
  • [49] NATURE OF RADIATION DEFECTS IN INDIUM-PHOSPHIDE
    GEORGOBIANI, AN
    MIKULYONOK, AV
    STOYANOVA, IG
    TIGINYANU, IM
    CRYSTAL LATTICE DEFECTS AND AMORPHOUS MATERIALS, 1987, 13 (3-4): : 169 - 178
  • [50] Investigation of Hysteresis Loops in SBN Single Crystal.
    Burkhanov, A. I.
    Pilipenko, A. S.
    Ivleva, L. I.
    Voronina, I. S.
    FUNCTIONAL MATERIALS AND NANOTECHNOLOGIES : FM&NT-2007, 2007, 93
12345