共 50 条
- [1] DETERMINATION OF THE RADIATION YIELD COEFFICIENT IN GALLIUM-PHOSPHIDE P-N STRUCTURES MEASUREMENT TECHNIQUES USSR, 1987, 30 (02): : 143 - 147
- [2] RADIATION DEFECTS IN GALLIUM-PHOSPHIDE DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1988, (05): : 47 - 50
- [3] FORMATION OF DEFECTS IN GALLIUM-PHOSPHIDE BY LASER IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (07): : 787 - 788
- [4] POLARIMETRIC PROPERTIES OF GALLIUM-PHOSPHIDE P-N-STRUCTURES PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1993, 19 (03): : 11 - 16
- [6] ANOMALOUS PHOTOEFFECT IN BARRIER STRUCTURES MADE OF INSULATING GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 1035 - 1037
- [7] ANNEALING OF RADIATION DEFECTS IN A GALLIUM-PHOSPHIDE SINGLE-CRYSTAL SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1334 - 1335
- [8] LIGHT-EMITTING GALLIUM-PHOSPHIDE P-I-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 818 - 819
- [9] INFLUENCE OF A1 POSTIMPLANTATION ON P-N-JUNCTIONS IN GALLIUM-PHOSPHIDE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02): : K153 - K156
- [10] STUDY OF P-N-STRUCTURES AND P-N-P-N-STRUCTURES BASED ON NONALLOYED GALLIUM-PHOSPHIDE LAYERS PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (20): : 1270 - 1274