ANNEALING OF RADIATION DEFECTS IN A GALLIUM PHOSPHIDE SINGLE CRYSTAL.

被引：0
|
作者：
Churin, S.A.
Frolov, I.A.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1975年 / 9卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The kinetics of annealing of radiation defects in GaP single crystals irradiated with zinc ions was investigated by determining the absorption of light in the implantation-doped layer as a function of the annealing temperature and duration. The measurements were carried out using an MV-MVI electronic spectrophotometer. Samples of n-type gallium phosphide were irradiated at room temperature using an ion-beam unit with magnetic field separation. The surface of a sample was scanned by the ion beam in order to ensure a uniform distribution of the impurity. The ion-current density did not exceed 0. 5 mu A/cm**2. Samples were annealed in silicone oil.
引用
收藏
页码：1334 / 1335
相关论文
共 50 条
  • [31] Terahertz Kerr effect in Gallium Phosphide crystal
    Cornet, M.
    Degert, J.
    Abraham, E.
    Freysz, E.
    2014 39TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2014,
  • [32] FORMATION OF DEFECTS IN GALLIUM-PHOSPHIDE BY LASER IRRADIATION
    ZENKOV, YV
    KASHKAROV, PK
    DZHIDZHOEV, MS
    PLATONENKO, VT
    POPOV, VK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (07): : 787 - 788
  • [33] Formation of defects in gallium phosphide grown in the presence of oxygen
    A. V. Skazochkin
    Yu. K. Krutogolov
    V. I. Maior
    Yu. I. Kunakin
    A. A. Matyash
    G. G. Bondarenko
    Technical Physics, 1997, 42 : 1031 - 1034
  • [34] Formation of defects in gallium phosphide grown in the presence of oxygen
    Skazochkin, AV
    Krutogolov, YK
    Maior, VI
    Kunakin, YI
    Matyash, AA
    Bondarenko, GG
    TECHNICAL PHYSICS, 1997, 42 (09) : 1031 - 1034
  • [35] The effect of magnetic field annealing on single crystal iron gallium alloy
    Yoo, J. -H.
    Restorff, J. B.
    Wun-Fogle, M.
    Flatau, A. B.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)
  • [36] RELAXATION OF CONDUCTIVITY AND ANNEALING OF RADIATION DEFECTS IN INDIUM-PHOSPHIDE IRRADIATED BY ALPHA-PARTICLES
    RADAUTSAN, SI
    MAKARENKO, VG
    OPILAT, VY
    TARTACHNIK, VP
    TYCHINA, II
    DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1988, (05): : 50 - 53
  • [37] OPTICAL PROPERTIES OF A DYSPROSIUM SINGLE CRYSTAL.
    Knyazev, Yu.V.
    Physics of Metals and Metallography, 1982, 54 (04): : 76 - 80
  • [38] FRACTURE TOUGHNESS OF LiF SINGLE CRYSTAL.
    Hayashi, Kunio
    Nomura, Masao
    Nishikawa, Tomozo
    Zairyo/Journal of the Society of Materials Science, Japan, 1986, 35 (388) : 66 - 72
  • [39] INFLUENCE OF AN ELECTRIC-FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM-ARSENIDE
    MAMONTOV, AP
    PESHEV, VV
    CHERNOV, IP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (12): : 1371 - 1372
  • [40] INFLUENCE OF ANNEALING OF RADIATION DEFECTS ON ABSORPTION SPECTRUM OF GALLIUM ARSENIDE IRRADIATED WITH FAST NEUTRONS
    BARAMIDZE, NV
    KURDIANI, NI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (04): : 555 - +
12345