Formation of defects in gallium phosphide grown in the presence of oxygen

被引：2
|
作者：
Skazochkin, AV [1 ]
Krutogolov, YK
Maior, VI
Kunakin, YI
Matyash, AA
Bondarenko, GG
机构：
[1] Sci Res Inst Elect Engn Mat, Kaluga 248650, Russia
[2] Moscow State Inst Elect & Math, Moscow, Russia
来源：
TECHNICAL PHYSICS | 1997年 / 42卷 / 09期
关键词：
D O I：
10.1134/1.1258740
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of oxygen introduced in the gaseous phase on the formation of defects in GaP epitaxial layers is investigated by deep-level transient spectroscopy. The extremal dependences of the concentrations of charge carriers and electron traps with energy E-c-0.24 eV on the oxygen flux are discussed. (C) 1997 American Institute of Physics.
引用
收藏
页码：1031 / 1034
页数：4
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