Formation of defects in gallium phosphide grown in the presence of oxygen

被引：2

作者：

Skazochkin, AV ^{[1
]}

Krutogolov, YK

Maior, VI

Kunakin, YI

Matyash, AA

Bondarenko, GG

机构：

[1] Sci Res Inst Elect Engn Mat, Kaluga 248650, Russia

[2] Moscow State Inst Elect & Math, Moscow, Russia

来源：

TECHNICAL PHYSICS | 1997年 / 42卷 / 09期

关键词：

D O I：

10.1134/1.1258740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of oxygen introduced in the gaseous phase on the formation of defects in GaP epitaxial layers is investigated by deep-level transient spectroscopy. The extremal dependences of the concentrations of charge carriers and electron traps with energy E-c-0.24 eV on the oxygen flux are discussed. (C) 1997 American Institute of Physics.

引用

页码：1031 / 1034

页数：4

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