NOTE ON IMPURITY OXYGEN IN GALLIUM PHOSPHIDE

被引：3
|
作者：
MIYAUCHI, T
SONOMURA, H
YAMAMOTO, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 07期
关键词：
D O I：
10.1143/JJAP.8.886
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：886 / &
相关论文
共 50 条
  • [1] STABILITY OF OXYGEN IMPURITY IN SILICON AND GALLIUM-PHOSPHIDE
    JAROS, M
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (14): : L459 - L463
  • [2] IMPURITY ABSORPTION IN GALLIUM-PHOSPHIDE DOPED WITH ZINC AND OXYGEN
    OLSSON, R
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (03) : 549 - &
  • [3] IMPURITY AND INTERVALLEY PHOTOCONDUCTIVITY OF GALLIUM PHOSPHIDE
    PIKHTIN, AN
    YASKOV, DA
    OMAR, OAH
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1274 - +
  • [4] IMPURITY DISTRIBUTION IN THE SOLUTION GROWTH OF GALLIUM PHOSPHIDE
    TRUMBORE, FA
    WHITE, HG
    KOWALCHIK, M
    LOGAN, RA
    LUKE, CL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) : C194 - C194
  • [5] BORON IMPURITY EFFECTS IN GALLIUM-PHOSPHIDE CRYSTAL
    KIM, CH
    YIP, S
    JOURNAL OF CHEMICAL PHYSICS, 1972, 57 (09): : 4055 - &
  • [6] INVESTIGATION OF DEEP FE IMPURITY STATES IN GALLIUM-PHOSPHIDE
    ANDRIANOV, DG
    GRINSHTEIN, PM
    IPPOLITOVA, GK
    OMELYANOVSKII, EM
    SUCHKOVA, NI
    FISTUL, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06): : 696 - 698
  • [7] MULTICHARGED STATE OF OXYGEN IN GALLIUM PHOSPHIDE.
    Ivashchenko, A.I.
    Ikizli, M.N.
    Samorukov, B.E.
    Slobodchikov, S.V.
    Solomonov, A.I.
    1978, 12 (01): : 49 - 51
  • [8] MULTICHARGED STATE OF OXYGEN IN GALLIUM-PHOSPHIDE
    IVASHCHENKO, AI
    IKIZLI, MN
    SAMORUKOV, BE
    SLOBODCHIKOV, SV
    SOLOMONOV, AI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (01): : 49 - 51
  • [9] ELECTRONIC STATES OF OXYGEN IN GALLIUM-PHOSPHIDE
    MORGAN, TN
    PHYSICAL REVIEW B, 1984, 29 (10): : 5667 - 5678
  • [10] ELECTRONIC STATES OF OXYGEN IN GALLIUM PHOSPHIDE.
    Morgan, T.N.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 146 - 148
12345