共 50 条
- [43] MOSSBAUER STUDY OF A COMPLEX SN-119 IMPURITY-DEFECT IN GALLIUM-PHOSPHIDE PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (02): : K147 - K149
- [44] CONCENTRATION QUENCHING OF LUMINESCENCE BY DONORS OR ACCEPTORS IN GALLIUM PHOSPHIDE AND IMPURITY-BAND AUGER MODEL PHYSICAL REVIEW, 1968, 173 (03): : 814 - +
- [45] Gallium self-diffusion in gallium phosphide APPLIED PHYSICS LETTERS, 1997, 70 (14) : 1831 - 1833
- [46] Influence of impurities (nitrogen, oxygen) on Er-related emission in gallium phosphide NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 541 - 544
- [47] RECOMBINATION RADIATION OF AN EXCITON BOUND TO A ZINC OXYGEN COMPLEX IN GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 81 - 82
- [48] NATURE OF A DEEP DONOR CENTER IN OXYGEN-DOPED GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 940 - 942
- [49] ELECTRON-CAPTURE (INTERNAL) LUMINESCENCE FROM OXYGEN DONOR IN GALLIUM PHOSPHIDE PHYSICAL REVIEW, 1968, 176 (03): : 928 - &
- [50] PROFILES OF ABSORPTION AND LUMINESCENCE SPECTRA OF DEEP CENTERS IN SEMICONDUCTORS (OXYGEN IN GALLIUM PHOSPHIDE). Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1563 - 1566