PASSIVATION OF HIGH-RESISTIVITY CADMIUM TELLURIDE BY HYDROGEN IMPLANTATION.

被引：0

作者：

Biglari, B. ^{[1
]}

Samimi, M. ^{[1
]}

Hage-Ali, M. ^{[1
]}

Siffert, P. ^{[1
]}

机构：

[1] Cent de Recherches Nucleaires, Strasbourg, Fr, Cent de Recherches Nucleaires, Strasbourg, Fr

来源：

Applied Physics A: Solids and Surfaces | 1987年 / A43卷 / 01期

关键词：

CRYSTALS; -; Growing; HYDROGEN;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Cadmium telluride crystals grown by the Travelling Heater Method (THM) technique have been implanted with hydrogen using protons from 2 kev to 3 Mev. Electrical measurements indicate drastic changes in the concentration of defects, especially in the 0. 15-0. 20 and 0. 45-0. 60 ev bands. However, the modification induced by hydrogen depends on the starting material, implantation and annealing conditions. Resistivity and carrier lifetime are also strongly affected by this treatment.

引用

页码：47 / 52

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