PASSIVATION OF HIGH-RESISTIVITY CADMIUM TELLURIDE BY HYDROGEN IMPLANTATION.

被引：0

作者：

Biglari, B. ^{[1
]}

Samimi, M. ^{[1
]}

Hage-Ali, M. ^{[1
]}

Siffert, P. ^{[1
]}

机构：

[1] Cent de Recherches Nucleaires, Strasbourg, Fr, Cent de Recherches Nucleaires, Strasbourg, Fr

来源：

Applied Physics A: Solids and Surfaces | 1987年 / A43卷 / 01期

关键词：

CRYSTALS; -; Growing; HYDROGEN;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Cadmium telluride crystals grown by the Travelling Heater Method (THM) technique have been implanted with hydrogen using protons from 2 kev to 3 Mev. Electrical measurements indicate drastic changes in the concentration of defects, especially in the 0. 15-0. 20 and 0. 45-0. 60 ev bands. However, the modification induced by hydrogen depends on the starting material, implantation and annealing conditions. Resistivity and carrier lifetime are also strongly affected by this treatment.

引用

页码：47 / 52

共 50 条

[1] PASSIVATION OF HIGH-RESISTIVITY CADMIUM TELLURIDE BY HYDROGEN IMPLANTATION
BIGLARI, B
SAMIMI, M
HAGEALI, M
SIFFERT, P
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01): : 47 - 52
[2] STRUCTURAL DEFECTS IN HIGH-RESISTIVITY CADMIUM TELLURIDE
SAMIMI, M
BIGLARI, B
HAGEALI, M
KOEBEL, JM
SIFFERT, P
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 283 (02): : 243 - 248
[3] EFFECTS OF COPPER IN HIGH-RESISTIVITY CADMIUM TELLURIDE
BIGLARI, B
SAMIMI, M
HAGEALI, M
KOEBEL, JM
SIFFERT, P
JOURNAL OF CRYSTAL GROWTH, 1988, 89 (04) : 428 - 434
[4] SINGLE-CRYSTAL HIGH-RESISTIVITY CADMIUM TELLURIDE
ZANIO, KR
ISOTOPES AND RADIATION TECHNOLOGY, 1972, 9 (04): : 456 - &
[5] LARGE AREA SURFACE BARRIERS ON HIGH-RESISTIVITY CADMIUM TELLURIDE
SERREZE, HB
BELL, RO
ENTINE, G
WALD, F
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : C241 - C241
[6] UNDOPED HIGH-RESISTIVITY CADMIUM TELLURIDE FOR NUCLEAR RADIATION DETECTORS
TRIBOULET, R
MARFAING, Y
CORNET, A
SIFFERT, P
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2759 - 2765
[7] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF HIGH-RESISTIVITY CRYSTALS OF CADMIUM TELLURIDE
AGRINSKAYA, NV
ARKADEVA, EN
MATVEEV, OA
RUD, YV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 776 - +
[8] CARRIER DRIFT MOBILITIES AND PL SPECTRA OF HIGH-RESISTIVITY CADMIUM TELLURIDE
SUZUKI, K
SETO, S
TANAKA, A
KAWASHIMA, M
JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 859 - 863
[9] BEHAVIOR OF ACCIDENTAL LI IMPURITIES IN HIGH-RESISTIVITY CADMIUM TELLURIDE SUBJECTED TO BRIEF ANNEALING
BABENTSOV, VN
GORBAN, SI
ZHOVNIR, GI
RASHKOVETSKII, LV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (04): : 456 - 458
[10] Boron oxide encapsulated Bridgman growth of high-purity high-resistivity cadmium telluride crystals
Zha, M
Zappettini, A
Bissoli, F
Zanotti, L
Corregidor, V
Dieguez, E
JOURNAL OF CRYSTAL GROWTH, 2004, 260 (3-4) : 291 - 297

← 1 2 3 4 5 →