PASSIVATION OF HIGH-RESISTIVITY CADMIUM TELLURIDE BY HYDROGEN IMPLANTATION.

被引：0

作者：

Biglari, B. ^{[1
]}

Samimi, M. ^{[1
]}

Hage-Ali, M. ^{[1
]}

Siffert, P. ^{[1
]}

机构：

[1] Cent de Recherches Nucleaires, Strasbourg, Fr, Cent de Recherches Nucleaires, Strasbourg, Fr

来源：

Applied Physics A: Solids and Surfaces | 1987年 / A43卷 / 01期

关键词：

CRYSTALS; -; Growing; HYDROGEN;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Cadmium telluride crystals grown by the Travelling Heater Method (THM) technique have been implanted with hydrogen using protons from 2 kev to 3 Mev. Electrical measurements indicate drastic changes in the concentration of defects, especially in the 0. 15-0. 20 and 0. 45-0. 60 ev bands. However, the modification induced by hydrogen depends on the starting material, implantation and annealing conditions. Resistivity and carrier lifetime are also strongly affected by this treatment.

引用

页码：47 / 52

共 50 条

[21] PASSIVATION OF LASER INDUCED DEFECTS IN SILICON BY LOW ENERGY HYDROGEN ION IMPLANTATION.
Slaoui, A.
Barhdadi, A.
Muller, J.C.
Siffert, P.
Applied Physics A: Solids and Surfaces, 1986, A39 (03): : 159 - 162
[22] FORMATION OF THERMALLY STABLE HIGH-RESISTIVITY ALGAAS BY OXYGEN IMPLANTATION
PEARTON, SJ
IANNUZZI, MP
REYNOLDS, CL
PETICOLAS, L
APPLIED PHYSICS LETTERS, 1988, 52 (05) : 395 - 397
[23] HIGH-RESISTIVITY LAYERS IN INP OBTAINED BY ION-IMPLANTATION
FAVENNEC, PN
LHARIDON, H
SALVI, M
GAUNEAU, M
REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (03): : 191 - 195
[24] Hydrogen-related defects in high-resistivity silicon
Soltanovich, OA
Feklisova, OV
Yakimov, EB
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 150 - 154
[25] PASSIVATION OF MERCURY CADMIUM TELLURIDE SURFACES
NEMIROVSKY, Y
BAHIR, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02): : 450 - 459
[26] Efficient Polysilicon Passivation Layer for Crosstalk Reduction in High-Resistivity SOI Substrates
Ben Ali, Khaled
Neve, Cesar Roda
Gharsallah, Ali
Raskin, Jean-Pierre
2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2010, : 212 - +
[27] Surface passivation effects in AlGaN/GaN HEMTs on high-resistivity Si substrate
Arulkumaran, S.
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 317 - 322
[28] Lead Telluride Nanowires for Surface Passivation in Cadmium Telluride Photovoltaics
Pokhrel, Dipendra
Bastola, Ebin
Subedi, Kamala Khanal
Jamarkattel, Manoj K.
Phillips, Adam B.
Heben, Michael J.
Ellingson, Randy J.
IEEE JOURNAL OF PHOTOVOLTAICS, 2022, 12 (06): : 1439 - 1444
[29] Noise properties of high resistivity Cl-doped cadmium telluride
Virt, IS
Kolek, A
Popovych, VD
Bilyk, IS
Noise and Fluctuations, 2005, 780 : 155 - 158
[30] Field-Effect Passivation of Lossy Interfaces in High-Resistivity RF Silicon Substrates
Rack, Martin
Nyssens, Lucas
Nabet, Massinissa
Lederer, Dimitri
Raskin, Jean-Pierre
2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2021,

← 1 2 3 4 5 →