Transferred-substrate HBTs with 254 GHz fτ

被引：0
|
作者：
Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara, CA 93106, United States [1 ]
机构：
来源：
Electron. Lett. | / 7卷 / 605-606期
关键词：
Capacitance - Computational methods - Lithography - Molecular beam epitaxy - Semiconductor device models - Semiconductor growth - Silicon wafers - Substrates;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Advances in device technology for heterojunction bipolar transistors (HBT) are necessary to further improve the performance of associated high speed analogue and digital circuitry. The transferred-substrate process has yielded a HBT device with record current gain cutoff frequency fτ of 254 GHz. The acquisition of a stepper alignment tool allows for a reduction in the base size and all alignment tolerances. With this lithographic capability the frequency performance of transferred-substrate HBT are increased dramatically.
引用
收藏
相关论文
共 50 条
  • [11] 170GHz transferred-substrate heterojunction bipolar transistor
    Bhattacharya, U
    Samoska, L
    Pullela, R
    Guthrie, J
    Lee, Q
    Agarwal, B
    Mensa, D
    Rodwell, MJW
    ELECTRONICS LETTERS, 1996, 32 (15) : 1405 - 1406
  • [12] 66 GHz static frequency divider in transferred-substrate HBT technology
    Lee, Q
    Mensa, D
    Guthrie, J
    Jaganathan, S
    Mathew, T
    Betser, Y
    Krishnan, S
    Ceran, S
    Rodwell, MJW
    1999 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM - DIGEST OF PAPERS, 1999, : 87 - 90
  • [13] A >400 GHz fmax transferred-substrate HBT integrated circuit technology
    Pullela, R
    Lee, Q
    Agarwal, B
    Mensa, D
    Guthrie, J
    Samoska, L
    Rodwell, M
    55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 68 - 69
  • [14] 100 GHz transferred-substrate Schottky-collector heterojunction bipolar transistor
    Bhattacharya, U
    Mondry, MJ
    Hurtz, G
    Guthrie, J
    Rodwell, MJW
    Liu, T
    Nguyen, C
    Rensch, D
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 145 - 148
  • [15] A 330 GHz Active Frequency Quadrupler in InP DHBT Transferred-Substrate Technology
    Hossain, M.
    Nosaeva, K.
    Weimann, N.
    Krozer, V.
    Heinrich, W.
    2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
  • [16] 48GHz static frequency dividers in transferred-substrate HBT technology
    Pullela, R
    Mensa, D
    Lee, Q
    Agarwal, B
    Guthrie, J
    Jagannathan, S
    Rodwell, MJW
    ELECTRONICS LETTERS, 1998, 34 (16) : 1580 - 1581
  • [17] 80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors
    Agarwal, B
    Lee, Q
    Mensa, D
    Pullela, R
    Guthrie, J
    Rodwell, MJW
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (12) : 2302 - 2307
  • [18] 185 GHz monolithic amplifier in InGaAs/InAlAs transferred-substrate HBT technology
    Urteaga, M
    Scott, D
    Mathew, T
    Krishnan, S
    Wei, Y
    Rodwell, MJW
    2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 1713 - 1716
  • [19] A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology
    Johansen, T. K.
    Hossain, M.
    Boppel, S.
    Doerner, R.
    Krozer, V.
    Heinrich, W.
    2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019), 2019, : 180 - 183
  • [20] A transferred-substrate HBT wide-band differential amplifier to 50 GHz
    Agarwal, B
    Lee, Q
    Pullela, R
    Mensa, D
    Guthrie, J
    Rodwell, MJW
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1998, 8 (07): : 263 - 265
12345