A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology

被引：0
|
作者：
Johansen, T. K. [1 ]
Hossain, M. [2 ]
Boppel, S. [2 ]
Doerner, R. [2 ]
Krozer, V. [2 ]
Heinrich, W. [2 ]
机构：
[1] Tech Univ Denmark, DTU Elektro, Lyngby, Denmark
[2] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, Berlin, Germany
来源：
2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019) | 2019年
关键词：
frequency multiplier; InP double heterojunction bipolar transistor; millimeter-wave integrated circuits;
D O I：
10.23919/eumic.2019.8909673
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is based on a balanced topology with Marchand balun at the input and rat-race hybrid coupler at the output. Reflector networks are employed to enhanced the third harmonic response. The measured third harmonic output power is -2.4 dBm at 267 GHz and -6.2 dBm at 303 GHz. The second harmonic leakage remains 10 dB lower than the third harmonic power over this bandwidth. The DC power consumption of the active tripler is only 37.6 mW at 303 GHz leading to a DC conversion efficiency of 0.64%.
引用
收藏
页码：180 / 183
页数：4
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