A 100 GHz Fundamental Oscillator with 25% Efficiency Based on Transferred-Substrate InP-DHBT Technology

被引：0
|
作者：
Hossain, Maruf [1 ]
Weimann, Nils [1 ]
Krozer, Viktor [1 ]
Heinrich, Wolfgang [1 ]
机构：
[1] Leibniz Inst Hochstfrequenztech, FBH, D-12489 Berlin, Germany
来源：
2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2016年
关键词：
InP DHBT; MMIC oscillators; millimeter wave (mm-wave) source; reflection oscillator; transferred-substrate (TS) process;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 96-GHz fixed-frequency fundamental oscillator with high efficiency is presented, realized using a transferred substrate (TS) 0.8 mu m InP-DHBT process. It delivers 9 dBm output power, with phase noise values of -90 dBc/Hz and -118 dBc/Hz at 1 MHz and 10 MHz offset frequency, respectively. DC consumption is only 30 mW from a 1.6 volts power supply, which corresponds to the highest overall DC-to-RF efficiency of a millimeter-wave frequency source reported to date.
引用
收藏
页码：497 / 500
页数：4
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