180 GHz Frequency Doubler in Transferred-Substrate InP HBT Technology with 4 dBm Output Power

被引：0

作者：

Jensen, T. ^{[1
]}

Kraemer, T. ^{[1
]}

Krozer, V. ^{[1
]}

Heinrich, W. ^{[1
]}

机构：

[1] Ferdinand Braun Inst FBH, Leibniz Inst Hochstfrequenztech, Berlin, Germany

来源：

2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年

关键词：

frequency multiplier; InP double heterojunction bipolar transistor; transfer-substrate process; millimeter-wave monolithic integrated circuits;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-ended frequency doubler in transferredsubstrate (TS) InP-DHBT technology is presented with state-of-the-art results. A maximum output power of 4 dBm and 9.6 dB conversion loss at 180 GHz is achieved with on-wafer measurements. An optimum conversion loss of 5.4 dB is realized with an output power of -3.4 dBm for the same frequency. The DC power consumption is 36 mW under saturated conditions. The suppression of the fundamental frequency is 11 dB. The doubler has very high output power over a broad bandwidth with 7 dBm at 160 GHz and 2.6 dBm at 220 GHz. The optimum conversion loss for the full 160-220 GHz range is better than 7 dB. The circuit utilizes a 2-finger HBT with an emitter size of 0.8 x 5 mu m(2) and total circuit area is 0.83 mu m(2).

引用

页码：1547 / 1550

页数：4

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